Manufacturing Method of Emitting Device

ABSTRACT

The present invention is a fabrication method of a light-emitting device characterized by ejecting a solution containing a luminescent material toward an anode or a cathode under a reduced pressure and characterized in that in a duration before the solution is arrived at the anode or the cathode, the solvent in the solution is volatilized, the remaining part of the luminescent material is deposited on the anode or the cathode, and thereby formed a light-emitting layer. By the present invention, a baking process for thickness reduction is not required after applying the solution. Accordingly, it is possible to provide a fabrication method with high throughput although the method is low in cost and simple.

TECHNICAL FIELD

The present invention belongs to a technical field related to a displaydevice (hereinafter, described “light-emitting element”) having, on asubstrate, an element structured by an anode, a cathode and a thin filmto cause a light-emitting by a phenomenon called electroluminescence(hereinafter, described “EL”) sandwiched between the anode and thecathode, and to a technical field related to an electronics devicehaving the light-emitting element in an image display portion.

BACKGROUND ART

A display for displaying an image is one of the light-emitting elementsindispensable in modern living. The display for displaying an imagetakes a variety of forms matched to applications, ranging from so-calleda television monitor to a liquid crystal display rapidly developed inrecent years and an organic EL display expected for future development.Particularly, a liquid crystal display and an organic EL display arelight-emitting elements to be driven on low voltage, which are the mostimportant image displays from the viewpoint of energy saving.

Among them, an organic EL display draws the greatest attentions as aflat panel display element in the next generation.

In the emission mechanism of an organic EL display, a thin film(hereinafter, described “organic thin film”) structured of alight-emitting body composition is provided between electrodes to flowcurrent whereby the electrons injected from the cathode and the holesinjected from the anode recombine at a luminescent center in alight-emitting body film and form a molecule exciton, to thereby utilizea photon released upon returning of the molecule exciton to the groundstate.

Incidentally, the sort of the molecule exciton formed by thelight-emitting body composition can be a singlet excitation state and atriplet excitation state. The present specification includes a casewhere any one of the excitation states contributes to light-emitting.

In such an organic EL display element (hereinafter, described “organicEL element”), an organic thin film is usually formed as a film as thinas below 1 μm. In addition, because a light-emitting body film itself isa self-light-emitting type element given out light, an organic ELelement does not require a backlight as used on the conventionalliquid-crystal display. Accordingly, it is a great merit that an organicEL element can be extremely fabricated thin and lightweight.

Moreover, for example in an organic thin film of nearly 100-200 nm, thetime of from a carrier injection to a recombination reached isapproximately several ten nanoseconds in the light of the carriermobility in the light-emitting body composition film. Light-emitting isreached on the order of within a microsecond even if the course of froma carrier recombination to a light-emitting is included. Accordingly,very high-speed of response is also one of features.

Furthermore, because an organic EL element is a carrier-injection typelight-emitting element, it can be driven on direct-current voltage, andhardly cause a noise. In addition, by forming a uniform ultra-thinorganic thin film having nearly 100 nm in film thickness and using asuitable organic material, a driving is also possible on a voltage ofseveral volts. Namely, an organic EL element, because of aself-light-emitting type and a wide in viewing angle, is well invisibility. Besides, an organic EL element also possesses the propertiesof thin and lightweight, high-speed responsibility, driving indirect-current and low voltage, and the like, and thus is expected as alight-emitting element in the next generation.

In order to fabricate such an organic EL element, there is an essentialneed of an art to form a thin film of a light-emitting body composition.In the liquid crystal display for example, in order to achieve afull-color display, there is a necessity to regularly form an organicthin film for functioning as a color filter on a glass substrate. On theother hand, in an organic EL element, a charge transport material fortransporting the holes and electrons injected at an electrode and aluminescent material for light-emitting are of a light-emitting bodycomposition. These compounds must be formed with a filmy form at betweenelectrodes.

As techniques for forming such an organic thin film, various methodshave been developed including a Langmuir-Blrogett method (LB method), amonomolecular film stack method, a dip coating method, a spin coatmethod, an inkjet method, a print method, a evaporation method, or thelike. Among them, an inkjet method has particularly a merit that anorganic material can be used with high-efficiency, a configuration of anapparatus is simple and can be reduced in size, and so on. Technically,it is already approximated to the practical application level. The basictechnology concerning an inkjet method is disclosed in Patent Document1, etc.

Patent document 1: Japanese Patent Laid-Open No. H10-12377

An inkjet method is an art that an inkjet system employed on theconventional printer is converted to a thin film forming, which is amethod to apply droplets on a pixel to pixel basis by using, in place ofink, a solution or a dispersion liquid containing a light-emitting bodycomposition as a material of an organic thin film. By volatilizing thesolvent contained in the droplet, a thin film is formed on theindividual pixel. By controlling the position of the droplet attached ona substrate, it is possible to form an arbitrary micropattern.

However, because the droplet deposited on the pixel (actually, pixelelectrode provided in each pixel) contains a great amount of solventcomponent, there is a need of a process for volatilizing a solventcomponent (hereinafter, described “baking process”) in order to remove asolvent component. Namely, after applying a droplet by an inkjet method,the pixel entirety is heated to volatilize a solvent component andthereby the remaining solute (material of an organic thin film) isformed with a thin film. Accordingly, in a case where the solvent of thesolution containing a light-emitting body composition has a low vaporpressure, time is required in the baking process. Besides, a dropletsattached on the neighboring pixels is ready to mix together, and theformation of a microscopic thin film pattern is hindered. In addition,when a solvent component is left in the thin film, the solventvolatilizes with time and a degasification phenomenon is caused.Therefore, a factor incurring a deterioration in the organic thin filmand ultimately a deterioration as a light-emitting element is caused.Furthermore, if the heating temperature is raised to remove the solventcomponent completely, it results in destruction in the composition of anorganic thin film having a low heat resistance.

In this manner, a formation method of the organic thin film based on inkjet method is advantageous in low cost and simple. However, a formationmethod of the organic thin film based on ink jet method has a problem inbaking process, and thus is an art left room for improvement.

DISCLOSURE OF THE INVENTION

The present invention has been made in view of the above problem, andthe present invention is an object to provide a technology foreliminating a baking process in an approach of forming an organic thinfilm by applying a solution. Furthermore, it is an object to provide amanufacturing method of a light-emitting device with high throughput inlow cost and a simple method by applying the present art to manufacturea light-emitting device.

The present invention is a manufacturing method of a light-emittingdevice, characterized by spraying a solution containing a light-emittingbody composition toward a pixel electrode (anode or cathode) underreduced pressure, specifically 1×10²-1×10⁵ Pa, preferably 10-2×10⁴ Pa todeposit the light-emitting body composition on the pixel electrode, andthereby form a thin film having at least one layer. At this time, induration before the solution arrives at the pixel electrode, the solventin the solution may be volatilized and the remaining of thelight-emitting body composition may be deposited on the pixel electrode,and thereby at least an organic thin film having at least one layer maybe formed. Furthermore, by previously heating the pixel electrode(preferably at room temperature (typically 20° C.)-300° C., furtherpreferably 50-200° C., considering the heat resistance of thelight-emitting body composition), the solvent in the solution may becommenced to volatilize simultaneously with an arrival of the solutionat the pixel electrode, to deposit the remaining of the light-emittingbody composition on the pixel electrode, and thereby an organic thinfilm having at least one layer may be formed. In any event, the presentinvention is characterized in that solvent component is volatilizedsimultaneously with forming an organic thin film having at least onelayer, and thereby the baking process required in the conventionalprocess is eliminated or shorten.

In the present invention, a light-emitting body refers to a carrierinjection material (hole injection material or electron injectionmaterial), a carrier transport material (hole transport material orelectron transport material), a carrier blocking material (hole blockingmaterial or electron blocking material), a luminescent material oranother organic compound or inorganic compound contributing to carrierrecombination, and a laminated body thereof. In addition, alight-emitting body composition refers to a composition usable as amaterial of those light-emitting bodies, irrespective of organiccompound or inorganic compound. The light-emitting body compositionroughly includes a luminescent material and a carrier (hole or electron)transport material.

The luminescent material is a material that causes an EL-basedluminescent phenomenon by injecting holes or electrons. Such aluminescent material is found in an inorganic compound and an organiccompound. The method of applying a solution like the present inventionpreferably uses an organic compound. In addition, the luminescentmaterial may use a material to cause fluorescence based on singletexcitation or a material to cause phosphorescence based on tripletexcitation. Moreover, the hole transport material is a material allowingthe hole to readily move while the electron transport material is amaterial allowing the electron to readily move.

The pressure lower than the atmospheric pressure may be given as1×10³-1×10⁵ Pa in an atmosphere filled with an inert gas such asnitrogen or rare gas (hereinafter, referred to as inert atmosphere), and1×10²-1×10⁵ Pa under a reduced pressure. By being placed under a reducedpressure (also called in vacuum), the droplet ejected in the atmospherealways volatilizes the solvent from the droplet in the duration up to anarrival at the pixel electrode, thus the droplet volume is beingreduced. At the time of an arrival at the pixel electrode, nearly allthe part of the solvent vaporizes so as to complete film formationsimultaneously with the arrival. Namely, there is excellence over theconventional art in that there is no need of a heating process, such asa baking process, after solution application.

In addition, in order to sufficiently volatilize the solvent before anarrival at the pixel electrode, it is preferred to use a highly volatilesolvent (i.e. solvent high in vapor pressure) as a solvent. This isbecause, at low volatility, there is a need to increase the timerequired in volatilization by increasing the distance between the pixelelectrode and an injection tip of the solution (nozzle tip), and whenthe distance is long, the trajectory error of a droplet is increased.Highly volatile solvents include alcohols such as methanol and ethanol.

In addition, in case where a solvent having a high melting point is usedwithout using a solvent high in volatility, it is possible to eliminatethe anxiety, e.g. clogging occurrence at the nozzle tip due to drying ofdroplets at the injection tip. In such a case, in case where the pixelelectrode is previously heated (at a room temperature (typically 20° C.)to 300° C., further preferably 50 to 200° C., in consideration of heatresistance of the light-emitting body), volatilization begins togetherwith an arrival of the droplet at the pixel electrode, and it ispossible to complete a baking process simultaneously with ejection of adroplet to another pixel. Of course, by the above method, film qualitycan be further improved by volatilizing the solvent from the droplet ina duration up to an arrival of the droplet at the pixel electrode andfurther by previously heating the pixel electrode.

The above solvent high in melting point can use NMP(N-methylpyrrolidone), DMF (dimethyl formamide), DMSO (dimethylsulfoxide), HMPA (hexamethyl phosphoramide) or other polar solvents. Inaddition, the solvent low in polarity may use aromatic solvents likealkylbenzene (particularly, long-chain alkylbenzene like dodecylbenzeneis preferred) such as xylene. For example, it is possible to use asolvent mixing tetralin and dodecylbenzene by 1:1.

Incidentally, the present invention can carry out in fabricating apassive matrix type light-emitting device and in fabricating anactive-matrix type light-emitting device, and therefore the presentinvention is not especially limited to a light-emitting device mode. Inaddition, the luminescent material can be carried out on also aninorganic compound without limited to an organic compound. Moreover, thesubstrate to be processed can use paper, a polymer membrane, aninorganic oxide plate including glass, an indium-thin oxide (ITO) film,or the like without any limitation. Particularly, in the case ofcarrying out the present invention, there is no especially need of abaking process after solution application, and thereby the presentinvention is effective in laminating organic compounds.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view of a solution-applying device used incarrying out the present invention.

FIG. 2 is a sectional view of a solution-applying device used incarrying out the present invention.

FIG. 3 is a sectional view of a solution-applying device used incarrying out the present invention.

FIG. 4 is a sectional view of a vessel for reserving a solutioncontaining a light-emitting body composition, in the solution-applyingdevice used in carrying out the present invention.

FIG. 5 is a view showing a manufacturing method of a light-emittingdevice of the present invention.

FIG. 6 is a view showing a manufacturing method of a light-emittingdevice of the present invention.

FIG. 7 is a top view and a sectional view showing a pixel structure of alight-emitting device by carrying out the present invention.

FIG. 8 is a top view and a sectional view showing a pixel structure of alight-emitting device by carrying out the present invention.

FIG. 9 is a top view of a manufacturing apparatus to be used in carryingout the present invention.

FIG. 10 is a top view and a side view of a manufacturing apparatus to beused in carrying out the present invention.

FIG. 11 is a top view and a side view of a manufacturing apparatus to beused in carrying out the present invention.

FIG. 12 is a view showing a fabrication method of a light-emittingdevice in the present invention.

FIG. 13 is a sectional view of a solution-applying device to be used incarrying out the present invention.

FIG. 14 is a top view of a manufacturing apparatus to be used incarrying out the present invention.

FIG. 15 is a view showing an exterior view of a light-emitting deviceobtained in carrying out the present invention.

FIG. 16 is a view showing an example of electronic appliances having alight-emitting device obtained by carrying out the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION Embodiment Mode 1

An Embodiment Mode of the present invention is explained using FIG. 1.FIG. 1(A) represents a state immediately after ejecting a solutioncontaining a luminescent material. FIG. 1(B) represents a state that theluminescent material has arrived at an anode or a cathode so as to forma thin film (light-emitting layer). Incidentally, the figure shows amanner that the substrate is provided parallel with respect to thehorizontal plane and a light-emitting body is ejected from the below ofthe substrate.

In FIG. 1(A), 101 is an anode or a cathode, 102 is an insulator definingthe each pixel, and 103 is a carrier injection layer. The carrierinjection layer 103 is a hole injection layer provided that 101 is ananode, or an electron injection layer provided that 101 is a cathode. Inaddition, 104 is a magnification of a head in a device for applying asolution (hereinafter, referred to as a solution applying device), whichpartly shows an internal structure. The head 104 has a plurality ofejector parts 105 a-105 c having a function to eject a solutioncontaining a luminescent material, which are respectively provided withpiezoelectric elements (piezo elements) 106 a-106 c. Moreover, theejector parts 105 a-105 c are respectively filled with solutions 107a-107 c containing luminescent materials.

Here, the solution 107 a containing a luminescent material includes aluminescent material to cause light-emitting in red, the solution 107 bcontaining a luminescent material includes a luminescent material tocause light-emitting in green, and the solution 107 c containing aluminescent material includes a luminescent material to causelight-emitting in blue. These three kinds of luminescent materialsrespectively constitute a pixel to cause light-emitting in red, a pixelto cause light-emitting in green and a pixel to cause light-emitting inblue. These three pixels are grasped as one pixel unit.

Incidentally, although FIG. 1(A) explains only one ejector partrespectively corresponding to each of R (red), G (green) and B (blue), aplurality of ejector parts (nozzles) can be arranged in parallel. Takingthroughput into consideration, it can be considered the most desirableto arrange those in the number corresponding to the number of pixels(pixel count) on one row or one column of a pixel portion.

In addition, the most characteristic point in the present invention liesin that a space 108 between the head 104 and the anode or the cathode101 is sustained at a reduced pressure, i.e. at a pressure lower thanthe atmosphere pressure. Specifically, this is at 1×10³-1×10⁵ Pa ininert atmosphere. The solution 107 a-107 c containing a luminescentmaterial filled in the ejector part 105 a-105 c is pressurized andpushed out by alteration in volume of the piezoelectric element 106a-106 c and ejected toward the pixel electrode 101. And, the ejecteddroplet 109 travels while volatilizing the solvent under the reducedpressure so that the remaining luminescent material is deposited on thepixel electrode 101. As a result, the luminescent material is depositedintermittently.

Thus, a thin film deposited is formed to a thin film in a state fullyremoved a solvent component without especially volatilizing the solventby the means of heating or the like. Accordingly, it is possible toobtain a light-emitting layer reduced in problems such as deteriorationwith time due to degasification. By the structure as above, bakingprocess or the like is not required even after applying the solution,and it is possible to greatly improve throughput and prevent theluminescent material itself from deteriorating due to heating.Incidentally, although the present invention is characterized in thatbaking process is not needed, if baking process such as heating processunder a reduced pressure is used together, the effect of the presentinvention that a light-emitting layer is obtained that is fully removeda solvent component and reduced in degasification does not be spoiled.

In this manner, a light-emitting layer 110 a for light-emitting in red,a light-emitting layer 110 b for light-emitting in green, and alight-emitting layer 110 c for light-emitting in blue are formed, asshown in FIG. 1(B). Thereafter, when a counter electrode (a cathode foran anode, an anode for a cathode) is provided after forming a carriertransport layer, a carrier injection layer and the like, if necessary,and then a light-emitting element is completed.

Embodiment Mode 2

The present Embodiment Mode is an example to apply a gel solution havinga certain degree of viscosity instead of applying a solution by ejectingdroplets. FIG. 2(A) represents a state that a solution containing aluminescent material is being ejected while FIG. 2(B) represents a statethat the solution containing a luminescent material is ceased fromejecting. Incidentally, this figure shows a manner that the substrate isprovided parallel with respect to the horizontal plane and alight-emitting body is being ejected from the below of the substrate. Inaddition, the same references as those used in FIG. 1 may be referred tothe explanation of Embodiment Mode 1.

The present Embodiment Mode has a plurality of ejector parts 205 a-205 crespectively having functions to eject luminescent materials, in a head204 of a solution applying device as shown in FIG. 2(A), and therespective ones 205 a-205 c are provided with piezoelectric elements(piezo elements) 206 a-206 c. In addition, the ejector parts 205 a-205 care respectively filled with solutions 207 a-207 c containingluminescent materials. At this time, similarly to FIG. 1(A), thesolution 207 a containing a luminescent material includes a luminescentmaterial to cause light-emitting in red, the solution 207 b containing aluminescent material includes a luminescent material to causelight-emitting in green, and the solution 207 c containing a luminescentmaterial includes a luminescent material to cause light-emitting inblue.

However, in the present Embodiment Mode, the viscosity of the solution207 a-207 c containing a luminescent material is adjusted higher thanthe viscosity of the solution 107 a-107 c containing a luminescentmaterial of Embodiment Mode 1. This is to apply the solution containinga luminescent material continuously. As a result, the luminescentmaterial is deposited continuously. In addition, as shown in FIG. 2(A),when applying the solution 207 a-207 c containing a luminescentmaterial, the solution 207 a-207 c containing a luminescent material ispressurized and applied in a manner being pushed out by an inert gassuch as nitrogen in a state where the piezoelectric element 206 a-206 cis pushed down.

Incidentally, the solution 207 a-207 c containing a luminescent materialbegins to volatilize the solvent immediately after coming out of theinjection tip so as to reach onto a pixel electrode 101 while beinggradually reduced in volume. By the time the solution reached onto thepixel electrode 101, the solvent in the major part is volatilized andthe remaining luminescent material is deposited to form a light-emittinglayer. Of course, the atmosphere within the space 108 is sustained at areduced pressure similar to Embodiment Mode 1.

In addition, as shown in FIG. 2(B), when the application of the solution207 a-207 c containing a luminescent material ceases, the pressurizationby the inert gas is stopped and the piezoelectric element 206 a-206 c isput in a state pushed up (in the direction of an arrow). By doing so,the solution containing a luminescent material is retracted to somewhatdeep from the injection tip, and thereby it is possible to prevent thesolution from drying.

Furthermore, at this time, by placing the space 108 with a solventatmosphere, the solution 207 a-207 c containing a luminescent materialcan be prevented from drying at the injection tip. In addition, althoughthe present Embodiment Mode showed the example that the solution isintroduced into the injection tip by the use of the piezoelectricelement 206 a-206 c, this can be similarly made by putting the space 108in a pressurized state.

In this manner, a light-emitting layer 210 a for light-emitting in red,a light-emitting layer 210 b for light-emitting in green and alight-emitting layer 210 c for light-emitting in blue are formed, asshown in FIG. 2(B). Thus, because the light-emitting layer formedbecomes a thin film in a state fully removed a solvent component withoutespecially volatilizing the solvent by the means of heating or the like,it is possible to obtain a light-emitting layer reduced in the problemof deterioration with time due to degasification. Even after applyingthe solvent by the above structure, there is no need for a bakingprocess and the like, and it is possible to greatly improve throughputand to prevent the luminescent material itself from deteriorating due toheating.

Incidentally, although the present invention is characterized in that abaking process is not required, if the baking process such as a heatingprocess under a reduced pressure is used together, the effect of thepresent invention that a light-emitting layer is obtained that is fullyremoved solvent component and reduced in degasification does not bespoiled. In addition, thereafter, when a counter electrode (a cathodefor an anode, an anode for a cathode) is provided after forming acarrier transport layer, a carrier injection layer and the like, ifnecessary, and then a light-emitting element is completed.

In addition, the present invention can be carried out in manufacturing apassive-matrix type light-emitting device and in manufacturing anactive-matrix type light-emitting device, and thus the present inventionis not limited to the form of a light-emitting device. Moreover, theluminescent material can be practiced concerning an inorganic compoundnot limited to an organic compound. Particularly, when the presentinvention is carried out, a case where organic compounds are laminatedis effective because baking process is not especially required afterapplying a solution.

Embodiment Mode 3

The present Embodiment Mode is explained by using FIG. 3. FIG. 3(A)represents a state that a solution containing a luminescent material isejected, and the droplet thereof is arrived at an anode or a cathodehereupon. FIG. 3(B) represents a state that a luminescent material isbaked over the anode or a cathode to thereby form a thin film(light-emitting layer). This figure shows a manner that the substrate isprovided parallel with respect to the horizontal plane wherein alight-emitting body is by ejection from the below of the substrate.Incidentally, the solution-applying device in FIG. 3 is the same as thatexplained in FIG. 1. The parts having the same references as those usedin FIG. 1 may be referred to the explanation in Embodiment Mode 1.

In FIG. 3(A), the ejector parts 105 a-105 c having piezoelectricelements (piezo elements) 106 a-106 c are respectively filled withsolutions 307 a-307 c containing luminescent materials. The solution 307a-307 c containing a luminescent material uses, as a solute, aluminescent material for light-emitting in red, green or blue, and, as asolvent, a solvent having a high boiling point (note, preferably tovolatilize at room temperature (typically 20° C.) to 300° C., morepreferably at 50 to 200° C.). For this reason, the solution 307 a-307 ccontaining a luminescent material is a solution considerably not toreadily dry.

The solutions 307 a-307 c containing luminescent materials are pushedout by the piezoelectric elements 106 a-106 c and ejected through aplurality of ejector parts 105 a-105 c. The liquid deposit in a stateimmediately after arrival on the anode or the cathode 101 is denoted at309. Of course, the space 108 between the head 104 and the anode or thecathode 101 is sustained at a reduced pressure, i.e. at a pressure lowerthan the atmosphere pressure. Specifically, it is at 1×10³-1×10⁵ Pa ininert atmosphere.

At this time, the anode or the cathode 101 is heated at a roomtemperature (typically 20° C.) to 300° C., further preferably 50 to 200°C. The liquid deposit 309 immediately after arrival on the anode or thecathode 101 begins to volatilize the solvent at a time of arrival.Incidentally, FIG. 3(A) explains only the pixels of one line. However,the actual pixel region is arranged with a plurality of lines of pixelsin juxtaposition so that the solutions 307 a-307 c containingluminescent materials are ejected onto the pixels in sequence.Accordingly, a constant time is required in the application throughoutthe entire pixels. The present Embodiment Mode is introduced to completea baking process by making use of such a constant time.

The thin film thus deposited is nearly completed in a baking process atthe time the application is ended over the entire pixel region. Despitecarrying out a baking process, process time can be greatly shortened ascompared to the conventional approach. In this manner, a light-emittinglayer 310 a for light-emitting in red, a light-emitting layer 310 b forlight-emitting in green, and a light-emitting layer 310 c forlight-emitting in blue are formed, as shown in FIG. 3(B). In addition,thereafter, when a counter electrode (a cathode for an anode, an anodefor a cathode) is provided after forming a carrier transport layer, acarrier injection layer and the like, if necessary, and then alight-emitting element is completed.

Incidentally, the structure of this Embodiment Mode that the entirepixel region to turn into a region to be formed is heated up duringapplying a solution by an inkjet scheme by the use of a solutioncontaining a luminescent material using a solvent high in boiling point,even if applied to the solution applying device of the structure of notonly Embodiment Mode 1 but also in Embodiment Mode 2, can obtain thesame effect as the present Embodiment Mode.

Embodiment Mode 4

The present Embodiment Mode explains an art for filling a light-emittingbody composition without exposure to the air during filling a solutioncontaining a light-emitting body composition to the head shown inEmbodiment Mode 1 and Embodiment Mode 2.

FIG. 4 shows a sectional view of a vessel (canister can) for reserving(stocking) a solution containing a light-emitting body composition in asolution-applying device. A vessel 351 is desirably formed of a materialhaving a sufficient resistance to secrecy, particularly, transmission ofoxygen or moisture. It preferably uses stainless steel, aluminum or thelike. In addition, the inner surface is desirably mirror finished.Furthermore, the inner surface and/or the outer surface may be provided,as required, with an insulation film low in oxygen transmittance of asilicon nitride film, diamond-like carbon film or the like. This is forpreventing against deterioration of a solution 352 containing alight-emitting body composition provided within the vessel 351.

In addition, 353 is an introduction port for introducing an inert gas ofnitrogen, a rare gas or the like into the vessel 351, through which aninert gas is introduced to pressurize the in-vessel pressure. Inaddition, 354 is an exit port to feed the solution 352 containing alight-emitting body composition delivered by pressurization to the headof the solution-applying device (not shown). The introduction port 353and the exit port 354 may be formed of a different material from thevessel 351 or integrally formed therewith.

Incidentally, 356 is a introduction tube for coupling to theintroduction port 353. When actually introducing an inert gas, the tipof the introduction tube 356 is connected to the in introduction port353 to thereby introduce the inert gas. Similarly, the tip of the exittube 357 is coupled to the exit port 354, to allow the solution 352containing a light-emitting body composition to exit. In the figure,they are removable and hence shown by the dotted lines.

Each head shown in Embodiment Mode 1 and Embodiment Mode 2 is attachedat an extended tip of the exit tube 357. In the case of Embodiment Mode1, by vibrating the piezoelectric element 106 a-106 c in a state thevessel 351 at its inside is pressurized by the inert gas, the solution352 containing a light-emitting body composition can be ejectedintermittently. In addition, in the case of Embodiment Mode 2,continuous application is possible during pressurization by the inertgas within the vessel 351. When pressurization is ceased, the solution352 containing a light-emitting body composition is stopped fromejecting.

Furthermore, the present Embodiment Mode is characterized in that, inthe duration of from placing the solution 352 containing alight-emitting body composition into the vessel 351 up to an attachmentto the solution-applying device, transport is always in a state shieldedfrom the air. Namely, the maker as a manufacturer of the solution 352containing a light-emitting body composition is permitted to place asolution 352 containing a light-emitting body composition into thevessel 351, transport it while keeping air-tightness without release tothe air, and attach it directly onto the solution applying device. Thisis a devising made in view of the fact that the light-emitting bodycomposition is low in resistance to oxygen or moisture and ready todeteriorate. Because of the capability of keeping the purity ofrefinement as it is in the duration of after refining the light-emittingbody composition and before application, it contributes to suppressionagainst deterioration in the light-emitting body composition andultimately to improvement in the reliability of the light-emittingdevice.

Incidentally, the vessel shown in FIG. 4 in the present Embodiment Modeis a suitable one example for transporting a solution containing alight-emitting body composition while keeping the purity thereof, whichis not limit the vessels which can be used for the present invention.

Embodiment Mode 5

The present Embodiment Mode is characterized in that a longer wavelengthregion of light is used upon heating the pixel region entirety inEmbodiment Mode 3. The structure of the present embodiment is explainedusing FIGS. 5(A)-(C). Incidentally, FIG. 5(A) is a view of the substrateas viewed from the below when the substrate is heated up in the presentEmbodiment Mode. FIG. 5(B) is a sectional view along A-A′ therein, andFIG. 5(C) is a sectional view along B-B′ therein.

In FIG. 5(A), 601 is a substrate which transmits at least a longerwavelength of light (typically, a longer wavelength of light than awavelength 300 nm) than a visible portion of light, on which thin filmtransistors, pixel electrodes and the like are provided. The substrate601 is transported in a direction of an arrow 602 by a transportmechanism not shown.

In addition, a head 603 of a solution-applying device is providedunderneath a surface to be processed of the substrate 601, to apply asolution containing a light-emitting body composition in the formexplained in Embodiment Mode 1-3. A light-emitting body composition 604applied is heated by the light (hereinafter, referred to as lamp light)emitted from a lamp 605 set up above a backside of the substrate 601,and made into a light-emitting body 606 by volatilization of solvent(being baked). Namely, the applied light-emitting body composition 604,after application, is baked sequentially by lamp light and made into athin film.

Namely, by moving the substrate 601, the head 603 and the lamp 605 isrelatively scanned in a direction reverse to the moving direction of thesubstrate 601. Of course, the substrate 601 can be fixed to scan thehead 603 and the lamp 605. In this case, the head 603 is structurallyearlier to be scanned at all times. As a result, effected nearlysimultaneously are solution application by the head 603 and thesubsequent baking process base on lamp light, and then it can obtain aneffect equal to substantially curtail the baking process.

Incidentally, the light can be used as lamp light is a wavelength oflight capable of heating only without destructing the composition of thelight-emitting body 606. Specifically, it is preferably a longerwavelength of light than 400 nm, i.e. a longer wavelength of light thaninfrared light. For example, it can use an electromagnetic wave in awavelength region of 1 μm-10 cm from a far-infrared ray to a microwave.Particularly, a far-infrared ray (typically a wavelength of 4-25 μm) ispreferably used in respect of handling.

In addition, although the example was herein shown that entire-surfaceapplication is completed simply by once scanning of the head 603, thesubstrate 601 may be reciprocated several times to perform repeatedapplications a plurality of number of times, and then the scanning ofthe lamp 605 may be performed. At this time, the lamp 605 may be put offduring the scanning of the head 603 in first few times. In synchronismwith the last scanning of the head 603, scanning and light-emitting maybe made with the lamp 605.

As above, by irradiating a longer wavelength than far-infrared region oflight by the use of a light source such as a lamp as heating means in abaking process, application and baking of a light-emitting bodycomposition can be carried out nearly simultaneously. This can provide aprocess substantially omitted a baking process. This can improve thethroughput in a manufacture process of a light-emitting device.

Embodiment Mode 6

The present Embodiment Mode is characterized in that a Roll-to-Rollscheme is employed in Embodiment Mode 5. Namely, as shown in FIG. 6(A),a flexible substrate such as a polymer film is previously formed in astrip form and taken up in a cylindrical form. In FIG. 6(A), thin filmtransistors, pixel electrodes and the like are previously provided on atake-up flexible substrate 21. The substrate 21 is led out in adirection of an arrow 22 from a tip and again taken up to a cylindricalcore, and thus a substrate 20 is formed. FIG. 6(B) is a view of thepresent device as viewed from the below. The substrate 21 taken up isled out in the direction of the arrow 22 and again taken up to form aroll-formed substrate 20.

By leading out the substrate 21 from the tip, the substrate is exposed.The head 603 of a solution-applying device is set up below an exposedportion 23, to apply a solution containing a light-emitting bodycomposition in the form explained in Embodiment Mode 1-3. Incidentally,a plurality of the head of the solution-applying device can be provided.The applied light-emitting body composition 604 is heated by the lamplight from the lamp 605 set up above the exposed portion 23 of thesubstrate, and volatilized a solvent (baked) and made into alight-emitting body 606. As a result, nearly simultaneously effected canbe solution application by the head 603 and the subsequent bakingprocess base on lamp light.

In addition, because it is possible to apply a solution containing alight-emitting body composition nearly continuously, it is easy toprevent the nozzle from drying. Furthermore, because the substrate canbe provided in a state taken up in a roll form, solution application andbaking process can be achieved nearly simultaneously, and therefore theexposed portion 23 of the substrate can be decreased in area. Becausethe substrate completed of baking can be immediately taken up into aroll form, the throughput of the light-emitting device in a manufactureprocess can be improved. Besides, size reduction and space saving of thelight-emitting device can be achieved at the same time.

Embodiment Mode 7

The light-emitting body shown in Embodiment Mode 1-5 includes alight-emitting layer, a hole injection layer, a hole transport layer, ahole blocking layer, an electron injection layer, and an electrontransport layer or an electron blocking layer or a lamination thereof.These may be structured by only organic compounds or by a compositelaminated with organic and inorganic compounds.

Accordingly, the present Embodiment Mode explains an example using acomposite that organic and inorganic compounds are conjugated as alight-emitting body for a light-emitting device of the presentinvention. Incidentally, there is U.S. Pat. No. 5,895,932 as a patentcharacterized in a hybrid structure laminated with organic and inorganiccompounds. This patent is an art that the ultraviolet light (wavelength380 nm) emitted from a diode formed of an inorganic compound isirradiated to Alq₃ (tris-8-quinolinolato aluminum complex) as an organiccompound and thereby to extract the light caused by a phenomenon calledphotoluminescence. This is a technical idea basically different from thelight-emitting body explained in the present Embodiment Mode, i.e.composite.

Among organic compounds, polymeric organic compounds (hereinafter,referred to as organic polymers) are high in heat resistance and easy tohandle, and hence used as solutes in the film forming methods withsolution application. The present Embodiment Mode explains a case usinga composite of an organic polymer and an inorganic compound as alight-emitting body.

The examples of forming a light-emitting body by laminating an organicpolymer and an inorganic compound typically include the following fourpatterns:

(a) combination of a hole injection layer (or hole transport layer) ofan inorganic compound and a light-emitting layer of an organic polymer,

(b) combination of an electron injection layer (or electron transportlayer) of an inorganic compound and a light-emitting layer of an organicpolymer,

(c) combination of a light-emitting layer of an inorganic compound and ahole injection layer (or hole transport layer) of an organic polymer,and

(d) combination of a light-emitting layer of an inorganic compound andan electron injection layer (or electron transport layer) of an organicpolymer.

In addition, the examples of forming a light-emitting body by mixing anorganic polymer and an inorganic compound typically include thefollowing three patterns:

(e) an organic polymer having a carrier transportability is provided asa light-emitting layer, and combination mixed with an inorganic compoundin the organic polymer,

(f) combination mixed, as a light-emitting layer, with an organicpolymer and inorganic compound having the same conductivity (n-type orp-type) of carrier transportability, and

(g) combination of an organic polymer having a carrier transportabilitymixed with an inorganic compound having a carrier acceptability.

The above structure (g) includes a combination, for example, of anorganic polymer having a hole transportability mixed with an inorganiccompound having an electron acceptability. In this case, the inorganiccompound having an electron acceptability is in a structure that theinorganic compound receives electrons from the organic polymer and, as aresult, holes occur in the organic polymer and furthermore the holes aretransported to obtain transportability.

In the above structures (a)-(g), the hole injection layer or the holetransport layer formed of an inorganic compound can use a p-typesemiconductor material such as NiO (nickel oxide). The electroninjection layer or the electron transport layer formed of an inorganiccompound can use an n-type semiconductor material such as ZnO (zincoxide) or TiO₂ (titanium dioxide). The light-emitting layer formed of aninorganic compound can use such as ZnS (zinc sulfide) or CdS (cadmiumsulfide).

For example, the example of the above structure (b) includes an exampleusing PPV (polyparaphenylene vinylene) as an organic polymer and CdS asan inorganic compound, and manufacturing these by solution application.In this case, in forming CdS, a nano-fine particle (refer to a particleof several nm to several tens nm, ditto in the hereinafter) of CdS canbe dispersed in a solvent and applied. The application process of thepresent invention may be carried out to this application process.Incidentally, in place of Cds, may be used an n-type semiconductormaterial of ZnO, TiO₂ or the like or a p-type semiconductor material ofNiO or the like. In addition, a conjugated polymer such as apolyacetylene derivative, a polythiophene derivative, a polyphenyleneethynylene derivative, a polyvinyl carbazole derivative, a polyfluorenederivative and a polysilanes may be used as the organic polymer.

The example of the above structure (e) includes an example using PVK(polyvinyl carbazole) as an organic polymer and CdS as an inorganiccompound and manufacturing these by solution application. In this case,light-emitting takes place on CdS as a luminescent center. In formingCdS, a CdS particle can be dispersed in a solvent and applied. Theapplication process of the present invention may be carried out to thisapplication process. Incidentally, in place of Cds, an inorganiccompound such as ZnS can be used. These CdS and ZnS, because ofinorganic compounds easy to make a nano-fine particle, are quitesuitable materials where solution application is premised as in thepresent invention.

In addition, the example of the above structure (g) uses PC(polycarbonate) as an organic polymer, and the PC is mixed with TPD(triphenyl diamine) as a hole transportable inorganic compound andalkoxide of Ti to perform solution application, and then to form alight-emitting body mixed with PC, TPD and TiO₂ by hydrolysis andheating under a reduced pressure. In this case, in forming CdS, a CdSparticle can be dispersed in a solvent and applied. The applicationprocess of the present invention may be carried out to this applicationprocess.

As above, a composite light-emitting body (composite) can be fabricatedby the use of various organic and inorganic compounds. In addition, inthe formation thereof, the fabrication method of the present inventioncan be carried out.

Incidentally, the structure of a light-emitting body (composite) shownin the present Embodiment Mode can be fabricated in any of the methodsin Embodiment Modes 1-3 and 5. Preservation is also possible in thevessel shown in Embodiment Mode 4.

Embodiment Mode 8

The present Embodiment Mode explains one example of a light-emittingdevice that can be fabricated by carrying out the present invention,with using FIG. 7. In a pixel structure shown in FIG. 7(A), 401 is adata signal line, 402 is a gate signal line, 403 is a power source line,404 is a switching thin film transistor (referred to as a switching TFT,ditto in the hereinafter), 405 is a capacitor for holding charge, 406 isa driving thin film transistor (referred to as a driving TFT, ditto inthe hereinafter) for supplying current to the light-emitting device, 407is a pixel electrode connected to a drain of the driving TFT, and thepixel electrode 407 functions as an anode of the light-emitting device.In addition, 412 is a counter electrode. The counter electrode 412functions as a cathode of a light-emitting device.

FIG. 7(B) shows a figure corresponding to a sectional plane on A-A′ atthis time. In FIG. 7(B), 410 is a substrate that can use a transparentsubstrate of a glass substrate, a quartz substrate, a plastic substrateor the like. The driving TFT 406 is formed on the substrate 410 by theuse of a semiconductor process. In addition, an insulator 408 patternedin a grating form is provided in a manner covering an end of the pixelelectrode 407 formed so as to be connected to the driving TFT 406 and atleast the driving TFT and a switching TFT.

On these pixel electrodes 407, provided are light-emitting bodies 411a-411 c, a counter electrode 412 functioning as a cathode and apassivation film 413. The light-emitting bodies 411 a-411 c refers to anorganic compound, inorganic compound or a lamination thereof, whichcontributes to carrier recombination in a carrier injection layer, acarrier transport layer, a carrier blocking layer, a light-emittinglayer and the like. The lamination structure and material of thelight-emitting bodies 411 a-411 c may use a known structure andmaterial.

For example, the light-emitting body as its at least one layer mayinclude an inorganic hole injection layer (or may be referred to as aninorganic hole transport layer) high in resistance (resistivity:1-1×10¹¹ Ω·cm) as described in Japanese Patent Laid-open No.2000-268967, Japanese Patent Laid-open No. 2000-294375, etc. Theinorganic hole injection layer contains, as a first component, an alkalimetal element selected from Li, Na, K, Rb, Cs and Fr, an alkali earthmetal element selected from Mg, Ca and Sr or a lanthanide-based elementselected from La and Ce, and as a second component, an element selectedfrom Zn, Sn, V, Ru, Sm and In. In addition, the light-emitting body asits at least one layer may include an inorganic electron transport layerhigh in resistance (resistivity: 1-1×10¹¹ Ω·cm). The inorganic holeinjection layer contains a metal element selected from Au, Cu, Fe, Ni,Ru, Sn, Cr, Ir, Nb, Pt, W, Mo, Ta, Pd and Co, or an oxide, an carbide, anitride, a silicide or a boride thereof. In addition, the inorganic holeinjection layer may be based on an oxide of silicon, germanium orsilicon germanium. By using a stable inorganic insulation film in a partof the light-emitting body, reliability can be enhanced as alight-emitting device.

In addition, the counter electrode 412 can use an aluminum film orsilver thin film containing an element belonging to group 1 or 2 of theperiodic table. However, in the case of the present Embodiment Mode,because of the necessity to transmit the light emitted from thelight-emitting body 411 a-411 c, the film thickness is desirably givenat 50 nm or less. Moreover, the passivation film 413 can use aninsulation film exhibiting high blockability against moisture andoxygen, such as a silicon nitride film, an aluminum nitride film, adiamond-like carbon film or the like.

In fabricating a light-emitting device of the above structure,implementing the present invention makes it possible to produce alight-emitting device high in throughput by a low cost and a simplemethod. Furthermore, the reliability of the light-emitting device can bealso improved.

Embodiment Mode 9

The present Embodiment Mode explains one example of a light-emittingdevice that can be fabricated by carrying out the present invention,with using FIG. 8. In a pixel structure shown in FIG. 8(A), 501 is adata signal line, 502 is a gate signal line, 503 is a power source line,504 is a switching TFT, 505 is a capacitor for holding charge, 506 is adriving TFT, 507 is a drain electrode of the driving TFT, and 508 is apixel electrode connected to the drain of the driving TFT, and the pixelelectrode 508 functions as an anode of the light-emitting device. Thispixel electrode 508 preferably uses a conductor film transparent for avisible portion of light so that the light emitted from thelight-emitting body can transmit. It preferably uses an oxide conductorfilm such as ITO (compound of indium oxide and thin oxide) or a compoundof indium oxide and zinc oxide. 512 is a counter electrode. The counterelectrode 512 functions as a cathode of the light-emitting device.

FIG. 8(B) is a figure corresponding to a sectional plane on A-A′ at thistime. In FIG. 8(B), 510 is a substrate that can use a transparentsubstrate of a glass substrate, a quartz substrate, a plastic substrateor the like. The driving TFT 506 is formed on the substrate 510 by theuse of a semiconductor process. In addition, an insulator 509 patternedin a grating form is provided in a manner covering an end of the pixelelectrode 508 formed so as to be connected to the driving TFT 506 and atleast the driving TFT and a switching TFT.

On these pixel electrodes 508, provided are light-emitting bodies 511a-511 c, a counter electrode 512 to function as a cathode and apassivation film 513. The light-emitting bodies 511 a-511 c refer to anorganic compound, inorganic compound or a lamination thereof, whichcontributes to carrier recombination in a carrier injection layer, acarrier transport layer, a carrier blocking layer, a light-emittinglayer and the like. The lamination structure and material of thelight-emitting bodies 511 a-511 c may use a known structure andmaterial.

For example, the light-emitting body as its at least one layer mayinclude an inorganic hole injection layer (or may be referred to asinorganic hole transport layer) high in resistance (resistivity:1-1×10¹¹ Ω·cm) as described in Japanese Patent Laid-open No. 2000-268967and Japanese Patent Laid-open No. 2000-294375, etc. The inorganic holeinjection layer contains, as a first component, an alkali metal elementselected from Li, Na, K, Rb, Cs and Fr, an alkali earth metal elementselected from Mg, Ca and Sr or a lanthanide-based element selected fromLa and Ce, and as a second component, an element selected from Zn, Sn,V, Ru, Sm and In. In addition, the light-emitting body as its at leastone layer may include an inorganic electron transport layer high inresistance (resistivity: 1-1×10¹¹ Ω·cm). The inorganic hole injectionlayer contains a metal element selected from Au, Cu, Fe, Ni, Ru, Sn, Cr,Ir, Nb, Pt, W, Mo, Ta, Pd and Co, or an oxide, an carbide, a nitride, asilicide or a boride thereof. In addition, the inorganic hole injectionlayer may be based on an oxide of silicon, germanium or silicongermanium. By using a stable inorganic insulation film in a part of thelight-emitting body, reliability can be enhanced as a light-emittingdevice.

In addition, the counter electrode 512 can use an aluminum film orsilver thin film containing an element belonging to group 1 or 2 of theperiodic table. Moreover, the passivation film 513 can use an insulationfilm exhibiting of high blocking against moisture and oxygen, such as asilicon nitride film, an aluminum nitride film, a diamond-like carbonfilm or the like.

In fabricating a light-emitting device of the above structure,implementing the present invention makes it possible to produce alight-emitting device high in throughput by a low cost and a simplemethod. Furthermore, the reliability of the light-emitting device can bealso improved.

Embodiment Mode 10

The present. Embodiment Mode shows in FIG. 9 an example of amulti-chamber schemed manufacturing apparatus automated in the processof from forming a light-emitting body to sealing the light-emittingelement. In FIG. 9, 11 is an accepted substrate stock chamber, 12, 14 a,18 and 24 are transport chambers (also called common chambers) fortransporting a substrate to be processed into each chamber, 15, 17 and21 are delivery chambers for delivering a substrate between thetransport chambers, and 29 is a take-out chamber of a processedsubstrate. In addition, 13 is a pre-processing chamber, to previouslyclean an electrode surface or adjust a work function before forming alight-emitting body.

In addition, 16R, 16G and 16B are deposition chambers respectively forlight-emitting layers corresponding to red, blue and green. 16H is adeposition chamber for a hole injection layer (HIL) or hole transportlayer (HTL). 16E is a deposition chamber for an electron injection layer(EIL) or electron transport layer (ETL). By providing asolution-applying device as a characterization of the present inventionin any one or a plurality of these deposition chambers, the presentinvention can be carried out. Incidentally, in a case where there is aneed to use a spin coat method for depositing a hole injection layer, ahole transport layer, an electron injection layer or an electrontransport layer, it is satisfactory to separately provide a depositionchamber for spin coating.

In addition, 19 is a deposition chamber for an oxide conductor film, 20is a deposition chamber for depositing a metal film to turn into acathode, and 23 is a deposition chamber for depositing an insulationfilm used as a passivation film. The deposition chamber 20 can be madeas a deposition chamber based on an evaporation method. However, in thecase of evaporation, because there is a concern that deteriorationoccurs in the TFT and luminescent material due to radiation such as ofX-rays and electron beams, the deposition chamber is preferably based ona sputter method.

In addition, 27 is a sealing substrate load chamber for stocking asealing substrate for sealing, 25 is a dispenser chamber for forming aseal material, and 26 is a seal chamber for bonding a processedsubstrate and a sealing substrate together to thereby seal thelight-emitting element. Owing to the provision of these sealing chamberand the like, the manufacturing apparatus shown in the presentembodiment can seal the light-emitting element without exposure of thelight-emitting element in air even once, and thus it provides aneffective structure in realizing a light-emitting device high inreliability.

In the manufacturing apparatus of FIG. 8, the chambers are respectivelypartitioned by gate valves, and this enables hermetic shield from otherchambers. Furthermore, the chambers are coupled respectively to vacuumexhaust pumps, and thus allowed to maintain a vacuum and to introduce aninert gas and then provide a reduced pressure atmosphere. The vacuumexhaust pump can use a magnetic-levitation-type turbo molecule pump, acryo-pump or a dry pump. In addition, the inert gas introduced ispreferably previously passed through a refiner or the like into highpurity.

Incidentally, the structure of the manufacturing apparatus shown in FIG.9 is a mere one example, and the present invention is not limited atall. The present Embodiment Mode shows the capability of combining thesolution-applying device for carrying out the manufacturing method of alight-emitting device of the present invention with amulti-chamber-schemed manufacturing apparatus, and can be carried out ina case to fabricate a light-emitting device through a combination withany structure of Embodiment Modes 1-8.

Embodiment Mode 11

The present Embodiment Mode shows in FIG. 10 an example that an in-lineschemed manufacturing apparatus for the process from forming alight-emitting body up to forming a cathode is combined with thesolution-applying device used in carrying out the present invention.Incidentally, FIG. 10(A) is a top view and FIG. 10(B) is a side view.

In FIGS. 10(A) and (B), 41 is load chamber for transporting a substrate,42 is an unload chamber for delivering a substrate, 43 is a depositionchamber for depositing a hole injection layer, 44 is a depositionchamber for depositing a hole transport layer, 45 is a depositionchamber for depositing a light-emitting layer, 46 is a depositionchamber for depositing an electron injection layer, and 47 is adeposition chamber for depositing a metal film to turn into a cathode.An arrow 50 in the figure is a transport direction of a substrate 40,and the substrate already processed is represented by the dotted line.At this time, the substrate 40 in a state where a surface to beprocessed is placed with the bottom up, is set up in a range of 0° to30° relative to the horizontal plane and transported to each depositionchamber.

The deposition chambers 43-46 are respectively solution-applying devicesfor carrying out the present invention, within which head 43 a, 44 a, 45a, 46 a is provided underneath the substrate. Every these heads have astructure explained in Embodiment Mode 1 or Embodiment Mode 2, to applya solution containing an organic compound or inorganic compound and forma thin film under a reduced pressure. Of course, there may be provided amechanism for heating the substrate 40 at room temperature (typically20° C.) to 30° C., further preferably 50 to 200° C. An arrow 51 shows amoving direction of the head 45 a, and it moves parallel with thesubstrate surface from one end to the other end of the substrate 40, andthus solution application and thin film formation is carried out.Incidentally, the distance (L) between the substrate 40 and a tip(ejection port) of the head 45 a is 2-20 mm. The ejection of a solutioncontaining an organic compound or an inorganic compound is ejected fromthe head positioned beneath the substrate, against a direction ofgravity. The solute is applied onto the substrate.

In addition, in FIG. 10(B), the side view of the deposition chamber(light-emitting layer) 45 corresponds to a manner of the head movingalong the substrate surface as viewed from the side surface. At thistime, in the deposition chambers 43-46, there is a flow of nitrogen,inert gas and other fluorinating gas in a direction of an arrow 52.Between the substrate 40 and the head 43 a-46 a, a laminar flow isformed by inert gas. At this time, the flowing inert gas can be heatedin place of or together with heating the substrate. Of course, it ispossible to make under a reduced pressure without introducing an inertgas.

The deposition chamber 47 is a chamber for depositing a metal film toturn into a cathode by the sputter method. Deposition is carried outwhile the substrate 40 is passing aside a rectangular target 47 a. Forexample, it is possible to form a metal film containing an elementbelonging to group 1 or 2 of the periodic table, e.g. an alloy film ofaluminum and lithium. Incidentally, target 47 a form is not limited tothis.

Incidentally, the feature of the present invention includes a point thatthere is no need of a baking process and the like because thin filmformation is made simultaneous with solution application. However,between the deposition chambers 43-47, may be provided a baking processof heating or the like under a reduced pressure. This is because, if asolvent component is removed from a thin film of a light-emitting layeror the like, reliability can be considered to improve correspondingly.

Embodiment Mode 12

The present Embodiment Mode shows in FIG. 11 an example that an in-lineschemed manufacturing apparatus for the process from forming alight-emitting body up to sealing the light-emitting element is combinedwith the solution-applying device used in carrying out the presentinvention. Incidentally, FIG. 11(A) is a top view of the manufacturingapparatus and FIG. 11(B) is a side view of the manufacturing apparatus.

In FIGS. 11(A) and (B), 61 is load chamber for transporting a substrate,62 is an unload chamber for delivering a substrate, 63 is a depositionchamber for depositing a hole injection layer, 64 is a depositionchamber for depositing a light-emitting layer, 65 is a depositionchamber for depositing an electron injection layer, 66 is a depositionchamber for depositing a metal film to turn into a cathode, and 67 is adeposition chamber for depositing a protection film having a passivationeffect. An arrow 70 in the figure is a transport direction of asubstrate 60, and the substrate already processed is represented by thedotted line. At this time, the substrate 60 is placed horizontally andtransported with the lower side of the substrate rendered as a surfaceto be processed.

The deposition chambers 63-65 are respectively solution-applying devicesfor carrying out the present invention, within which there is provided ahead 63 a, 64 a, 65 a. Every these heads each have a structure explainedin Embodiment Mode 1 or Embodiment Mode 2, to apply a solutioncontaining an organic compound or an inorganic compound and form a thinfilm under a reduced pressure. Of course, there may be provided amechanism for heating the substrate 60 at room temperature (typically20° C.) to 30° C., further preferably 50 to 200° C.

In addition, in FIG. 11(B), the side view of the deposition chamber(light-emitting layer) 64 corresponds to a manner of the head movingalong the substrate surface as viewed from the above. An arrow 71denotes a moving direction of the head 64 a, and it moves parallel withthe substrate surface from one end to the other end of the substrate 60,and thus solution application and thin film formation is carried out.Incidentally, the distance (L) between the substrate 60 and a tip(ejection port) of the head 64 a is 2-20 mm.

Furthermore, at this time, in the deposition chambers 63-65, there is aflow of nitrogen, inert gas and other fluorinating gas in a direction ofan arrow 72. Between the substrate 60 and the head 63 a-65 a, a laminarflow is formed by inert gas. At this time, the flowing inert gas can beheated in place of or together with heating the substrate. Of course, itis possible to make under a reduced pressure without introducing aninert gas.

In addition, the deposition chamber 66 is a chamber for depositing ametal film to turn into a cathode by the sputter method. Deposition ismade while the substrate 60 is passing aside a rectangular target 66 a.For example, it is possible to form a metal film containing an elementbelonging to group 1 or 2 of the periodic table, e.g. an alloy film ofaluminum and lithium. Incidentally, target 66 a form is not limited tothis.

In addition, the deposition chamber 67 is a chamber for depositing aninsulation film having a passivation effect by the sputter method(preferably radio-frequency sputter method). Deposition is made whilethe substrate 60 is passing aside a rectangular target 67 a in the samemanner as in Embodiment Mode 7. For example, it is possible to formsilicon compound film high in compactness, such as a silicon nitridefilm, a silicon nitride oxide film. Incidentally, target 67 a form isnot limited to this.

Incidentally, the feature of the present invention includes a point thatthere is no need of a baking process and the like because thin filmformation is made simultaneous with solution application. However,between the deposition chambers 63-66, may be provided a baking processof heating or the like under a reduced pressure. This is because, if asolvent component is removed from a thin film of a light-emitting layeror the like, reliability can be considered to improve correspondingly.

Embodiment Mode 13

The defect of ink-jet scheme lies in that, when ejection of a solutionis ceased, the solvent volatilizes and dries at the ejection port tothereby cause clogging in the head of the ejection port. One of theconventional methods for preventing this is to prevent against drying bycontinuously ejecting the solution at all times. Accordingly, becausethe solution is wastefully ejected and discharged, the utilizationefficiency of a light-emitting body composition lowers. The presentEmbodiment Mode explains means for preventing the head of the ejectionport from drying, by using FIG. 12.

FIGS. 12(A) and (B) are views of a manufacturing process of alight-emitting body in the present Embodiment Mode as viewed from thebelow and the lateral of the substrate, respectively. A head 801 of asolution-applying device positioned underneath a substrate 800 isscanned toward an arrowed direction. From the head 801, a solutioncontaining a light-emitting body composition is ejected in the formshown in Embodiment Modes 1-3, to form a light-emitting body 802 withoutthe need to especially provide a baking process. At this time, thepresent Embodiment Mode is characterized in that a container part 803for containing the head 801 after scanning is provided alongside thesubstrate 800. The interior thereof is filled with a gas volatilized asolvent. The gas volatilized a solvent (gas containing a solventcomponent), after introduced from an introduction port 804, is filledwithin the container part 803 through a plurality of openings 805positioned underneath the container part 803.

Incidentally, the “gas volatilized a solvent” is a solvent capable ofdissolving a light-emitting body to be formed, which is preferably thesame one as the solvent of a solution containing a light-emitting bodycomposition ejected at the head 801. Of course, there is no necessity tolimit it to the same one. Proper change may be made depending upon thekind of a light-emitting body to form.

In FIG. 12(C), (D) is shown a state of the head 801 at a time theforming process of a light-emitting body is ended. As shown in FIG.12(C), (D), the head 801 is accommodated in a manner completely hiddenwithin the container part 803, and thus exposed to a solvent gasatmosphere. At this time, it is effective to provide a lid on thecontainer part 803 so that, after the head 801 is accommodated, the lidis closed to suppress the solvent component from diffusing to theoutside. Of course, because the head is fixed and scanned by a not shownsupport material or the like, the lid is naturally closed by avoidingit.

As above, the present Embodiment Mode is characterized in that, afterending the forming process of a light-emitting body, the head is exposedto an atmosphere filled with a solvent capable of dissolving alight-emitting body to be formed. Due to this, in the ejection port ofthe head 801, because the light-emitting body composition is dissolvedby the solvent, clogging does not occur due to drying or the like.Namely, because of an environment free from drying even if ejection ofthe light-emitting body composition ceases, there is no need to usuallyeject a solution continuously and thereby prevent from drying like aconventional ink-jet scheme. Therefore, the ratio of discharge bywasteful ejection is reduced, and thus the utilization efficiency of alight-emitting body composition can be improved.

Incidentally, the technical idea that, after application, the head isexposed to the atmosphere filled with the solvent component andprevented from drying can be naturally applied to a case the surface tobe processed is taken above the substrate or a case the substrate isplaced perpendicularly.

In addition, the present Embodiment Mode can be combined with amanufacturing apparatus including any structure of Embodiment Modes 4,5, 10-12, and used in a fabrication method of a light-emitting deviceincluding any structure of Embodiment Modes 7-9.

Embodiment Mode 14

The present Embodiment Mode explains a head structure of asolution-applying device used in a fabrication method of alight-emitting device according to the present invention, by using FIG.13. Incidentally, the present Embodiment Mode takes a form to apply asubstrate horizontally placed with the surface to be processedpositioned lower (corresponding to Embodiment Modes 10, 11). However, itis needless to say that practicing is possible in a case the surface tobe processed is positioned upper of the substrate or a case thesubstrate is positioned perpendicularly.

In FIG. 13(A), a substrate 901 is supported with a suscepter 902 of amagnetic body and placed horizontal with the surface to be processedpositioned lower. A head 903 of a solution-applying device is providedclose to a surface of the substrate 901. At this time, the magnifyingpart at a tip of a nozzle (ejection port) 904 is shown by a dotted-linedpart 905. The nozzle interior is in a hollow structure, having a core906 fixed further inward thereof and a cap (hereinafter, referred to asa magnetic body cap) 908 made by a magnetic body coupled to the core 906through an elastic body (spring in the present Embodiment Mode) 907. Asolution 909 containing a light-emitting body composition is filledoutside the hollow structure.

The magnetic body cap 908 selects such a material that a repulsive forceacts against the suscepter 902 of a magnetic body. In the case of FIG.13(A), the distance (X1) between the substrate 901 and the magnetic bodycap 908 is a distance that a repulsive force does not effectively actsbetween the susceptor 902 and the magnetic body cap 908, which isdetermined by a material of a magnetic body, a substrate thickness, etc.In the case that a repulsive force does not effectively acts between thesuscepter 902 and the magnetic body cap 908, the magnetic body cap 908is urged by the elastic body 907 and plugged in the tip of the nozzle904, to prevent the solution 909 containing a light-emitting bodycomposition from ejecting.

In addition, after commencing solution application, the distance betweenthe substrate 901 and the magnetic body cap 908 is reduced to X2, asshown in FIG. 13(B). This distance X2 is a distance that a repulsiveforce fully acts between the suscepter 902 and the magnetic body cap908. By this repulsive force, the magnetic body cap 908 compresses theelastic body 907 and is pushed into an inside of the hollow structure.Due to this, a space is secured at the tip of the nozzle 904, to ejectthe solution 909 containing a light-emitting body composition. In thismanner, the solution 909 containing a light-emitting body composition isapplied to a surface of the substrate 901. The solvent is volatilizedunder a reduced pressure or the solvent is volatilized by the heat ofthe substrate 901, and thereby a light-emitting body 910 is formed.

As the above, by using a magnetic body in such a relationship as causingto act a repulsive force on both of the suscepter and the nozzle-tipcap, it is possible to take a structure for applying an internalsolution when approached to a certain constant distance, making itpossible to secure a uniformity in a distance between the substrate andthe head (exactly, nozzle). In addition, by controlling the distancebetween the substrate and the head, ejection can be controlled on-off.This technique is effective particularly in applying a solution onto asubstrate having concavity and convexity.

Incidentally, the present Embodiment Mode can be combined with amanufacturing apparatus including any structure of Embodiment Modes 4,5, 10-13. Moreover, it can be used in a manufacturing method of alight-emitting device including any structure of Embodiment Modes 7-9.

Embodiment Mode 15

The present Embodiment Mode explains an example using a multi-chamberschemed manufacturing apparatus, in a light-emitting devicemanufacturing apparatus for substrate transportation and deposition asshown in Embodiment Modes 13 and 14, by using FIG. 14. Incidentally, thechambers are mutually coupled by gate valves, to thereby keep a hermeticstate.

In FIG. 14, a carrier 702 for transporting a substrate is set up in astock chamber 701. The stock chamber 701 is coupled to a transportchamber 703 through the gate valve. The substrate furnished on thecarrier 702 is transported by a transport arm 704 and placed on asubstrate mounting table 705. At this time, the substrate is firstrested on a pusher pin 706 and thereafter the pusher pin 706 is loweredto place the substrate on the substrate mounting table 705. Thesubstrate mounting table 705 after fixing the substrate moves to aninside of a load/unload chamber 707, to deliver the substrate to asuscepter 700. Incidentally, in FIG. 14, the part that the suscepter 700is represented by the dotted line means that the substrate in processingpositions there but the substrate and the suscepter moves in unison asthe process proceeds so that it currently does not exist there.

The substrate delivered in the load/unload chamber 707 moves in unisonwith the suscepter 700 along a rail, and thus is transported to a commonchamber 708 coupled by the gate valve. A turntable 709 is providedwithin the transport chamber 708. When the suscepter 700 rests upon theturntable 709, the turntable 709 rotates to select a chamber to carryout the next process, coupled to the common chamber through the gatevalve.

The manufacturing apparatus in the present Embodiment Mode is provided,as processing chambers, with a deposition chamber (HTL depositionchamber) 710 for depositing a hole transport layer (HTL), a depositionchamber (light-emitting layer deposition chamber) 711 for depositing alight-emitting layer, a deposition chamber (ETL deposition chamber) 712for depositing an electron transport layer (ETL), and a depositionchamber (sputter deposition chamber) 713 for depositing a conductor filmby a sputter method. The deposition chambers 710-712 for forming alight-emitting body are each provided with a solution-applying deviceexplained in Embodiment Modes 1-3, which are chambers for depositing alight-emitting body composition by solution application such as inkjet.Incidentally, in each chamber, heads 710 a-712 a of solution-applyingdevice is provided underneath the substrate. These heads are scannedparallel with the substrate while ejecting a solution in a directiontoward the substrate, thereby forming a thin film.

In addition, the deposition chamber 713 for depositing a cathode by asputter method is provided with electrodes 714, 715 and target 716 forsputtering. These are all in a cylindrical or hyperelliptic form. Thesubstrate attached on the suscepter 700 is transported in the arrowdirection, to which deposition is made while passing aside the target716. At this time, the sputter method may use any of DC (direct current)sputter method and RF (alternating current) sputtering method.

The substrate (suscepter) ended the process at each chamber is returnedto the load/unload chamber 707, and accommodated in the carrier 702through the substrate mounting table 705 and the like. By the above,completed is the process up to forming a cathode of a light-emittingelement. Incidentally, although the present Embodiment Mode explainedthe manufacturing apparatus for carrying out the process up to forming acathode, the number of chambers can be increased to complete passivationfilm (protection film) formation and seal process by a seal can or thelike. Moreover, the light-emitting body structure is not limited to thisEmbodiment Mode but can be applied to a composite form as shown inEmbodiment Mode 6. In such a case, it is satisfactory to change thenumber of chambers, the processing content in the deposition chamber andothers.

Incidentally, the present Embodiment Mode may have the structure ofEmbodiment Modes 4, 5 and can be used in fabricating a light-emittingdevice described in Embodiment Modes 8, 9. Furthermore, the depositionchamber may be applied by the structure of Embodiment Modes 13, 14.

Embodiment Mode 16

This Embodiment Mode explains the overall structure of a light-emittingdevice fabricated by carrying out the present invention, by using FIG.15. FIG. 15 is a top view of a light-emitting device formed by sealingthrough a seal material a device substrate on which a thin filmtransistor is formed. FIG. 15(B) is a sectional view on B-B′ in FIG.15(A), and FIG. 15(C) is a sectional view on A-A′ in FIG. 15(A).

On the substrate 81, there are arranged a pixel part (display part) 82,a data line drive circuit 83 provided in a manner surrounding the pixelpart 82, gate line drive circuits 84 a, 84 b and a protection circuit85. A seal material 86 is provided in a manner surrounding those. Thepixel part 82 has a light-emitting element fabricated by carrying outthe present invention. The seal material 86 can use a UV setting resin,an epoxy resin or other resin but preferably use a material possibly lowin wettability. Incidentally, the seal material 86 may be providedsuperposed over a part of the data line drive circuit 83, gate linedrive circuit 84 a, 84 b and protection circuit 85, or provided avoidingthose circuits.

A sealing member 87 is bonded by the use of the seal material 86, toform a hermetic space 88 by the substrate 81, the seal material 86 andthe sealing member 87. The sealing member 87 can use a glass material, ametal material (typically, stainless steel), a ceramics material orplastics (including a plastic film). In addition, sealing is possible byonly an insulation film as shown in Embodiment Mode 8.

Incidentally, where the sealing member 87 uses a material different fromthe substrate 81, there is a possibility to spoil the adhesion of theseal material 86 due to a difference in thermal expansion coefficient.Accordingly, the sealing member 87 preferably uses the same material asthe substrate 81 for forming transistors thereon. In other words, it isdesired to use a substrate having the same thermal expansion coefficientas the substrate 81. In the present embodiment, glass is used as amaterial of the substrate 81 and sealing member 87. Furthermore, thesealing member 87 is regulated in thermal expansion coefficient by beingpassed the same thermal history as the thermal history of the substrate81 in a transistor fabrication process.

A absorbent (barium oxide, calcium oxide, or the like) 89 is previouslyprovided in a recess of the sealing member 87, to absorb moisture,oxygen and the like and keep a clean atmosphere within the hermeticspace 88, thus playing a role to suppress the EL layer fromdeteriorating. This recess is covered with a cover 90 in a finely meshedform. The cover 90 passes air and moisture but does not pass theabsorbent 89. Incidentally, the hermetic space 88 may be filled with aninert gas, such as nitrogen or argon. Filling can be by a resin or aliquid if inactive.

In addition, on the substrate 81, a terminal 91 is provided forconveying a signal to the data line drive circuit 83 and gate line drivecircuit 84 a, 84 b. To the terminal 91, a data signal such as a videosignal is conveyed through an FPC (flexible printed circuit) 92. Theterminal 91 has a section as FIG. 15(B), wherein electrical connectionis provided by use of a resin 97 dispersed with conductor 96 between awiring in a structure laying an oxide conductor film 94 on a wiring 93formed simultaneously with the gate line or data line and a wiring 95provided close to the FPC 92. Incidentally, the conductor 96 may use aspherical polymer compound plated with gold or silver.

In the present Embodiment Mode, the protection circuit 85 is providedbetween the terminal 91 and the data line drive circuit 83. When staticelectricity such as a surge pulse signal enters between the both, therole is played to release the pulse signal to the outside. At that time,a high voltage signal first instantaneously entered is blunted by acapacitor. The other high voltage can be released to the outside by acircuit structured by use of thin film transistors or thin film diodes.Of course, the protection circuit may be provided in other place, e.g.between the pixel part 82 and the data line drive circuit 83 or betweenthe pixel part 82 and the gate line drive circuits 84 a, 84 b.

Embodiment Mode 17

Although the structures of the thin film transistors shown in EmbodimentModes 8, 9 are both top-gate structures (specifically, planarstructures), a bottom-gate structure (specifically, an invertedstaggered structure) can be provided in each embodiment.

Naturally, not limited to the thin film transistor, application may beto a transistor in a MOS structure formed using a silicon-well.Furthermore, besides the thin film transistor, application may be to acase using a diode element (also called a two-terminal element)represented by a MIM (Metal-Insulator-Metal) element or the like.

In any way, the present invention even when carried out in fabricatingan active-matrix type light-emitting device is not impaired in itsnative effect by a switching element structure such as a transistorstructure.

Embodiment Mode 18

By incorporating a light-emitting device obtained by carrying out thepresent invention in a display portion, an electronic appliance can befabricated. The electronic appliance includes a video camera, a digitalcamera, a goggle-type display (a head mounted display), a navigationsystem, an audio reproducing apparatus (a car audio, an audio component,etc.), a notebook personal computer, a game apparatus, a personaldigital assistant (a mobile computer, a cellular phone, a portable gamemachine, an electronic book, etc.), an image reproducing apparatushaving a recording medium (specifically, an apparatus for reproducing arecording medium such as a digital versatile disc (DVD) and having adisplay for displaying an image thereof), and so on. The concreteexamples of those electronic appliances are shown in FIG. 16.

FIG. 16(A) is a television set including a housing 2001, a support base2002, a display portion 2003, a speaker 2004, a video input terminal2005, and the like. The present invention can be applied to the displayportion 2003. Incidentally, included are all the television fordisplaying information set for personal computers, for receiving TVbroadcast, for advertisement display, etc.

FIG. 16(B) is a digital camera including a main body 2101, a displayportion 2102, an image receiver 2103, operation keys 2104, an externalconnection port 2105, a shutter 2106, etc. The present invention can beapplied to the display portion 2102.

FIG. 16(C) is a notebook type personal computer including a main body2201, a housing 2202, a display portion 2203, a keyboard 2204, anexternal connection port 2205, a pointing mouse 2206, etc. The presentinvention can be applied to the display portion 2203.

FIG. 16(D) is a mobile computer including a main body 2301, a displayportion 2302, a switch 2303, operation keys 2304, an infrared-ray port2305, etc. The present invention can be applied to the display portion2302.

FIG. 16(E) is a portable-type image reproducing apparatus (specifically,a DVD reproducing apparatus) having a recording medium, including a mainbody 2401, a housing 2402, a display portion A 2403, a display portion B2404, a recording medium (DVD, etc.) reader portion 2405, an operationkey 2406, a speaker 2407, etc. The display portion A 2403 displaysmainly image information, and the display portion B 2404 displays mainlycharacter information. The present invention can be applied to thedisplay portions A 2403, B 2404. Incidentally, the image reproducingapparatus having a recording medium include a household game apparatus.

FIG. 16(F) is a goggle-type display (a head mounted display) including amain body 2501, a display portion 2502 and an arm portion 2503. Thepresent invention can be applied to the display portion 2502.

FIG. 16(G) is a video camera including a main body 2601, a displayportion 2602, a housing 2603, an external connection port 2604, a remotecontrol receiver 2605, a receiver 2606, a battery 2607, an audio input2608, operation keys 2609 and an eyepiece 2610. The present inventioncan be applied to the display portion 2602.

FIG. 16(H) is a cellular phone including a main body 2701, a housing2702, a display portion 2703, an audio input 2704, an audio output 2705,an operation key 2706, an external connection port 2707 and an antenna2708. The present invention can be applied to the display portion 2703.Incidentally, the display portion 2703 can suppress consumption currentfor the cellular phone by displaying white characters on a blackbackground.

As described above, the display device obtained by carrying out thepresent invention may be used as a display portion of every electronicappliance. Incidentally, the electronic appliance in the presentEmbodiment Mode may use a light-emitting device fabricated by using anystructure of Embodiment Modes 1-3 and 6-8.

INDUSTRIAL APPLICABILITY

The present invention enables to form a thin film nearly simultaneouslywith applying a solution containing a light-emitting body composition ofan organic compound, an inorganic compound or the like, and makes itpossible to greatly improve the throughput in a manufacturing process ofa light-emitting device.

In addition, the solvent component in a formed thin film can be fullyremoved simultaneously with film forming. Accordingly, it is possible toavoid such a disadvantage that the light-emitting layer itselfdeteriorates due to degasification after a light-emitting element iscompleted, and to improve the reliability of the light-emitting device.

1-29. (canceled)
 30. A fabrication method of a light-emitting devicecomprising the steps of: ejecting a solution containing a light-emittingbody composition from below toward an anode or a cathode under apressure lower than atmosphere pressure; volatilizing a solvent in thesolution at the anode or the cathode by previously heating the anode orthe cathode; and forming a thin film having at least one layerstructuring a light-emitting body by depositing a remaining of thelight-emitting body composition on the anode or the cathode.
 31. Afabrication method of a light-emitting device according to claim 30,wherein under the pressure lower than atmosphere pressure is in an inertgas atmosphere at 1×10³ to 1×10⁵ Pa.
 32. A fabrication method of alight-emitting device according to claim 30, wherein under the pressurelower than atmosphere pressure is in an inert gas atmosphere at 1×10² to1×10⁵ Pa.
 33. A fabrication method of a light-emitting device accordingto claim 30, wherein the light-emitting body composition isintermittently deposited to form a thin film.
 34. A fabrication methodof a light-emitting device according to claim 30, wherein thelight-emitting body composition is continuously deposited to form a thinfilm.
 35. A fabrication method of a light-emitting device according toclaim 30, wherein the solution containing the light-emitting bodycomposition is ejected through a single or a plurality of nozzles.
 36. Afabrication method of a light-emitting device according to claim 30,wherein the light-emitting body composition is at least one materialselected from the group consisting of a hole injection material, a holetransport material, a luminescent material, an electron transportmaterial, an electron injection material, a hole blocking material andan electron blocking material.
 37. A fabrication method of alight-emitting device according to claim 30, wherein the thin filmhaving at least one layer structuring the light-emitting body is a thinfilm to function as a layer selected from a luminescent layer, a holeinjection layer, a hole transport layer, a hole blocking layer, anelectron injection layer, an electron transport layer and an electronblocking layer.
 38. A fabrication method of a light-emitting devicecomprising the steps of: ejecting a solution containing a light-emittingbody composition from below toward an anode or a cathode under apressure lower than atmosphere pressure; volatilizing a solvent in thesolution at the anode or the cathode by previously heating the anode orthe cathode at from room temperature to 200° C.; and forming a thin filmhaving at least one layer structuring a light-emitting body bydepositing a remaining of the light-emitting body composition on theanode or the cathode.
 39. A fabrication method of a light-emittingdevice according to claim 38, wherein under the pressure lower thanatmosphere pressure is in an inert gas atmosphere at 1×10³ to 1×10⁵ Pa.40. A fabrication method of a light-emitting device according to claim38, wherein under the pressure lower than atmosphere pressure is in aninert gas atmosphere at 1×10² to 1×10⁵ Pa.
 41. A fabrication method of alight-emitting device according to claim 38, wherein the light-emittingbody composition is intermittently deposited to form a thin film.
 42. Afabrication method of a light-emitting device according to claim 38,wherein the light-emitting body composition is continuously deposited toform a thin film.
 43. A fabrication method of a light-emitting deviceaccording to claim 38, wherein the solution containing thelight-emitting body composition is ejected through a single or aplurality of nozzles.
 44. A fabrication method of a light-emittingdevice according to claim 38, wherein the light-emitting bodycomposition is at least one material selected from the group consistingof a hole injection material, a hole transport material, a luminescentmaterial, an electron transport material, an electron injectionmaterial, a hole blocking material and an electron blocking material.45. A fabrication method of a light-emitting device according to claim38, wherein the thin film having at least one layer structuring thelight-emitting body is a thin film to function as a layer selected froma luminescent layer, a hole injection layer, a hole transport layer, ahole blocking layer, an electron injection layer, an electron transportlayer and an electron blocking layer.
 46. A fabrication method of alight-emitting device comprising the steps of: setting up an anode or acathode in a range of 0° to 30° relative to a horizontal plane; ejectinga solution containing a light-emitting body composition from below undera pressure lower than atmosphere pressure; volatilizing a solvent in thesolution at the anode or the cathode by previously heating the anode orthe cathode at from room temperature to 200° C.; and forming a thin filmhaving at least one layer structuring a light-emitting body bydepositing a remaining of the light-emitting body composition on theanode or the cathode.
 47. A fabrication method of a light-emittingdevice according to claim 46, wherein under the pressure lower thanatmosphere pressure is in an inert gas atmosphere at 1×10³ to 1×10⁵ Pa.48. A fabrication method of a light-emitting device according to claim46, wherein under the pressure lower than atmosphere pressure is in aninert gas atmosphere at 1×10² to 1×10⁵ Pa.
 49. A fabrication method of alight-emitting device according to claim 46, wherein the light-emittingbody composition is intermittently deposited to form a thin film.
 50. Afabrication method of a light-emitting device according to claim 46,wherein the light-emitting body composition is continuously deposited toform a thin film.
 51. A fabrication method of a light-emitting deviceaccording to claim 46, wherein the solution containing thelight-emitting body composition is ejected through a single or aplurality of nozzles.
 52. A fabrication method of a light-emittingdevice according to claim 46, wherein the light-emitting bodycomposition is at least one material selected from the group consistingof a hole injection material, a hole transport material, a luminescentmaterial, an electron transport material, an electron injectionmaterial, a hole blocking material and an electron blocking material.53. A fabrication method of a light-emitting device according to claim46, wherein the thin film having at least one layer structuring thelight-emitting body is a thin film to function as a layer selected froma luminescent layer, a hole injection layer, a hole transport layer, ahole blocking layer, an electron injection layer, an electron transportlayer and an electron blocking layer.